Magnetic switching and magnetoresistance in nanoscale spin tunnel junctions

• Co/AlOx/Co magnetic tunnel junctions in both multijunction arrays and double-tunnel junction geometries have been studied. The junctions exhibit magnetoresistance (MR) and change their resistance by similar to10% depending on the relative magnetic orientation of the tunnel junction electrodes. MR measurements show a strong dependence on the device geometry. We find that it is necessary to form tunnel junctions with electrode width similar to70 nm for the magnetic switching at the tunnel junction to be clean and single domain like.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

Physics

Fysik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)