Influence of gate width on 50 nm gate length Si0.7Ge0.3 channel PMOSFETs

• Compressively strained Si0.7Ge0.3 channel pMOSFETs were fabricated and the effective hole mobility was found to be 20-30% higher in the Si0.7Ge0.3 devices than in their Si counterparts. The g(m,) normalized to gate width, was found to increase strongly with decreasing gate width in the Si0.7Ge0.3 devices, a behavior that was not found in the Si devices. All the Si0.7Ge0.3 devices down to 50 nm gate length showed enhanced g. compared to the Si devices for gate widths <1 um. At L = 50 nm and W = 0.25 mum the Si0.7Ge0.3 devices exhibited increased g(m) and I-D of about 15 %, in saturation, compared to the Si devices. I-on was 286 muA/mum and I-off was 0.23 nA/mum at V-dd = 1.5 Vfor the Si0.7Ge0.3 device.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Electronics

Elektronik

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)