Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-κ gate dielectrics and TiN gate

• Low-frequency noise and hole mobility are studied in Si and SiGe surface channel pMOSFETs with various types of high-kappa dielectric stacks (Al2O3, Al2O3/HfAlOx/Al2O3 and Al2O3/HfO2/Al2O3) and TiN as gate electrode material. Comparisons are made with poly-SiGe-gated pMOSFETs as well as P0lY-Si/SiO2/Si references. The choice of channel material (strained SiGe or Si), gate material (TiN or poly-SiGe), and high-kappa material (Al2O3, HfO2, HfAlOx) is discussed in terms of mobility and low-frequency noise. A TiN gate in combination with a surface SiGe channel is advantageous both for enhanced mobility and low 1/f noise. The dominant sources of carrier scattering are identified by analyzing the mobility measured at elevated temperatures. The 1/f noise is studied from subthreshold to strong inversion conditions and at different substrate biases. The mobility fluctuation noise model and the number fluctuation noise model are both used to investigate the 1/f-noise origin.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

1/f noise

high-K dielectrics

low-frequency noise

metal gate

MOSFETs

SiGe

field-effect transistors

surface channel pmosfets

charge-pumping method

1/f noise

cmos devices

mos devices

mosfets

stack

fluctuations

hfo2/al2o3

Electronics

Elektronik

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