Changes in luminescence intensities and carrier dynamics induced by proton irradiation in In_xGa_1-xAs/GaAs quantum dots

Marcinkevičius, SauliusKTH,Mikroelektronik och informationsteknik, IMIT (author)

QC 20100920
The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between InGaAs/GaAs quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot structures varying in dot surface density (4x10(8)-3x10(10) cm(-2)) and substrate orientation [(100) and (311)B]. Similar trends were observed for all quantum dot samples. A slight increase in photoluminescence emission intensity after low to intermediate proton doses is observed in InGaAs/GaAs (100) quantum dot structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

NATURVETENSKAP Fysik Atom- och molekylfysik och optik hsv//swe
NATURAL SCIENCES Physical Sciences Atom and Molecular Physics and Optics hsv//eng
enhanced radiation hardness
energy-relaxation
deep levels
damage
lasers
temperature
dependence
wells
gaas
degradation
Optics
Optik

Siegert, JörgKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u1l7dxnh (author)
Leon, Rosa (author)
Čechavičius, Bronislovas (author)
Magness, B. (author)
Taylor, W. (author)
Lobo, C. (author)
KTHMikroelektronik och informationsteknik, IMIT (creator_code:org_t)

In:Physical Review B. Condensed Matter and Materials Physics66:23, s. 235314-1098-01211550-235X

By the author/editor: Marcinkevičius, ...; Siegert, Jörg; Leon, Rosa; Čechavičius, Bro ...; Magness, B.; Taylor, W.; show more...; Lobo, C.; show less...

About the subject

NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Atom and Molecul ...

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