Techniques for depth profiling of dopants in 4H-SiC

3rd European Conference on Silicon Carbide and Related Materials, KLOSTER BANZ, GERMANY, SEP , 2000 NR 20140805
Three different methods for measuring the depth distribution of dopants in 4H-SiC have been investigated: (I) Spreading Resistance profiling (SRP), (2) Scanning Capacitance Microscopy (SCM) and (3) Scanning Electron Microscopy (SEM). The investigated samples included p- and n-type epitaxial layers grown by vapor phase deposition with doping concentrations of 10(16)-10(20) cm(-3). Also p(+)n implanted profiles using a combination of Al and B multi-energy implantations were studied. All techniques were able to provide doping profiles qualitatively corresponding to secondary ion mass spectrometry (SIMS) data. The SRP results suggest a lower limit of the p-doping concentration below which the ohmic contact between the probe tip and sample becomes more Schottky-like. The magnitude of the SCM signal corresponds well to the chemical doping profile except in the depleted region surrounding the metallurgical junction of the p(+)n structure.

NATURVETENSKAP Fysik Den kondenserade materiens fysik hsv//swe
NATURAL SCIENCES Physical Sciences Condensed Matter Physics hsv//eng
dopant activation; dopant profile; scanning capacitance microscopy (SCM); SEM; Spreading Resistance profiling (SRP)

Hallen, A (författare)
Anand, S (författare)
Linnarsson, M KKTH,Skolan för informations- och kommunikationsteknik (ICT)(Swepub:kth)u1x6y4ru (författare)
Andersson, H (författare)
Aberg, D (författare)
Panknin, D (författare)
Skorupa, W (författare)
KTHSkolan för informations- och kommunikationsteknik (ICT) (creator_code:org_t)

Av författaren/redakt...: Osterman, J; Hallen, A; Anand, S; Linnarsson, M K; Andersson, H; Aberg, D; visa fler...; Panknin, D; Skorupa, W; visa färre...

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