Ultra-shallow thermal donor formation in oxygen-containing ambient

LIBRIS-ID:oai:DiVA.org:kth-60819
https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-60819URI
https://doi.org/10.1002/(SICI)1521-3951(199812)210:2<527::AID-PSSB527>3.0.CO;2-LDOI

8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*), MONTPELLIER, FRANCE, JUL 27-30, 1998 NR 20140805
Czochralski-grown phosphorus-doped (approximate to 2 x 10(14) cm(-3)) silicon wafers have been annealed in nitrogen, wet nitrogen, argon, oxygen, and vacuum ambients at 470 degrees C for times up to 500 h. Sample characterization was made with capacitance-voltage, four-point probe, DLTS, thermally stimulated capacitance, admittance spectroscopy, secondary ion-mass spectrometry, and Fourier transform infrared spectroscopy. This study finds a strong relation between the previously reported ultra-shallow thermal donors (USTDs) and shallow thermal donors (STDs), and it is shown that the net concentration of thermally formed donors is independent on annealing ambient within the experimental accuracy. It was found that the majority of formed donors for long anneals consisted of either STDs or USTDs, however, it was found that oxygen-containing ambient is indispensable for forming USTDs.

Hallberg, T (författare)
Svensson, B G (författare)
Lindstrom, J L (författare)
Linnarsson, M KKTH,Skolan för informations- och kommunikationsteknik (ICT)(Swepub:kth)u1x6y4ru (författare)
KTHSkolan för informations- och kommunikationsteknik (ICT) (creator_code:org_t)

Ingår i:Physica status solidi. B, Basic research210, s. 527-5320370-19721521-3951

Av författaren/redakt...: Aberg, D; Hallberg, T; Svensson, B G; Lindstrom, J L; Linnarsson, M K

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