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Transmission electr...
Transmission electron microscopy investigation of defects in B-implanted 6H-SiC
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Persson, P. O. Å (author)
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Wahab, Q. (author)
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Hultman, L. (author)
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- Nordell, Nils (author)
- Industrial Microelectronics Center, Sweden
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Schöner, A. (author)
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Rottner, K. (author)
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Olsson, E. (author)
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- Linnarsson, Margareta (author)
- KTH,Elektronik,Solid State Electronics
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(creator_code:org_t)
- 1998-02
- 1998
- English.
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In: Silicon carbide, III-nitrides and related materials : ICSCIII-N'97. - : Trans Tech Publications Inc.. - 0878497900 ; , s. 413-416
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- Silicon carbide is due to its wide bandgap, high saturated electron drift velocity, high electric breakdown field and high thermal conductivity a suitable material for electron devices operating at high temperatures, high powers and high frequencies.[1,2] In order for SIC to reach its full potential in device technology, doping is essential. Usually ion implantation is used for doping since diffusion is difficult in SiC. Boron is a useful material for implantation because of its low atomic weight and greater penetration depth than other accepters, yet very few studies have been conducted on B-implanted 6H-SiC. [3,4] In this investigation we have used transmission electron microscopy (TEM) to study structural defects that are found in B-implanted 6H-SiC layers.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Boron Implantation
- Boron Precipitates
- Electron Microscopy
- Elemental Mapping
- Planar Defects
Publication and Content Type
- ref (subject category)
- kon (subject category)
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