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SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES
- SVENSSON, BG (author)
-
- LINNARSSON, MK (author)
- KTH,Skolan för informations- och kommunikationsteknik (ICT)
- MOHADJERI, B (author)
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- PETRAVIC, M (author)
- WILLIAMS, JS (author)
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- (creator_code:org_t)
- 1994
- 1994
- English.
- In: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 85, s. 363-369
- Journal article (peer-reviewed)
Abstract
Subject headings
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- This paper reviews recent secondary ion mass spectrometry (SIMS) work on (i) isotope shifts in ion implantation profiles, (ii) dopant profiles in silicon and beam-induced oxidation and (iii) surface roughness and profile broadening of Al(x)Ga1-(x)As/GaAs superlattice structures. Comparison is made with other techniques, and, in particular, the issues of depth resolution and conversion between sputtering time and sample depth are emphasized.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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- SVENSSON, BG
- LINNARSSON, MK
- MOHADJERI, B
- PETRAVIC, M
- WILLIAMS, JS
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- NATURAL SCIENCES
- NATURAL SCIENCES
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- Royal Institute of Technology
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