Growth and characterisation of 4H-SiC MESFET structures grown by hot-wall CVD

• Metal semiconductor field effect transistor, MESFET, structures have been grown in a hot-wall CVD reactor. Using trimethylaluminium and nitrogen as dopant sources, p- and n-type epitaxial layers were grown on semi insulating substrates. A comprehensive characterization study of thickness and doping of these structures has been performed by using scanning electron microscopy, secondary ion mass spectrometry, capacitance-voltage measurements. Each technique is discussed concerning its advantage and disadvantage. Some transistor properties of MESFETs processed on the grown material are presented.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Chemical reactors

Chemical vapor deposition

Electric variables measurement

Epitaxial growth

Interfaces (materials)

Scanning electron microscopy

Secondary ion mass spectrometry

Semiconductor doping

Semiconductor growth

Silicon carbide

Capacitance-voltage measurement

Trimethylaluminum

MESFET devices

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