Noise and mobility characteristics of bulk and fully depleted SOI pMOSFETs using Si or SiGe channels

• State of the art bulk and fully depleted SOI Si and SiGe channel pMOSFET devices with gate lengths ranging from 0.1 to 200 μm were fabricated and analyzed in terms of drain current drivability, mobility and noise performance. In general the SOI devices demonstrated superior mobility and significantly reduced I/f noise compared to bulk devices maintaining a well controlled short channel effects due to the ultra thin body.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Bulk devices; Drain current drivability; Gate lengths; Short channel effects; Carrier mobility; Channel capacity; Gates (transistor); Semiconducting silicon; Semiconducting silicon compounds; Signal noise measurement; Silicon on insulator technology; MOSFET devices

Semiconductor physics

Halvledarfysik

Publication and Content Type

ref (subject category)

art (subject category)