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Schottky-barrier he...
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Zhang, ZhenKTH,Integrerade komponenter och kretsar
(author)
Schottky-barrier height tuning by means of ion implantation into preformed silicide films followed by drive-in anneal
- Article/chapterEnglish2007
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Numbers
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LIBRIS-ID:oai:DiVA.org:kth-7951
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-7951URI
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https://doi.org/10.1109/LED.2007.900295DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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QC 20100923
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An experimental study on Schottky-barrier height (SBH) tuning using ion implantation followed by drive-in anneal of As, B, In, and P in preformed NiSi and PtSi films is presented. Measured on B-implanted NiSi and PtSi Schottky diodes, the effective SBH on n-type Si is altered to similar to 1.0 eV. For As- and P-implanted diodes, the SBH on p-type Si can be tuned to around 0.9 eV The process window for the most pronounced SBH modification is dopant dependent.
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Qiu, ZhijunKTH,Integrerade komponenter och kretsar(Swepub:kth)u1wkv8xt
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Liu, RanState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University
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Östling, MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u1u0kle4
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Zhang, Shi-LiKTH,Integrerade komponenter och kretsar(Swepub:kth)u1a28qyq
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KTHIntegrerade komponenter och kretsar
(creator_code:org_t)
Related titles
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In:IEEE Electron Device Letters28:7, s. 565-5680741-31061558-0563
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