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  • Zhang, ZhenKTH,Integrerade komponenter och kretsar (author)

Schottky-barrier height tuning by means of ion implantation into preformed silicide films followed by drive-in anneal

  • Article/chapterEnglish2007

Publisher, publication year, extent ...

  • 2007
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-7951
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-7951URI
  • https://doi.org/10.1109/LED.2007.900295DOI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • QC 20100923
  • An experimental study on Schottky-barrier height (SBH) tuning using ion implantation followed by drive-in anneal of As, B, In, and P in preformed NiSi and PtSi films is presented. Measured on B-implanted NiSi and PtSi Schottky diodes, the effective SBH on n-type Si is altered to similar to 1.0 eV. For As- and P-implanted diodes, the SBH on p-type Si can be tuned to around 0.9 eV The process window for the most pronounced SBH modification is dopant dependent.

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Added entries (persons, corporate bodies, meetings, titles ...)

  • Qiu, ZhijunKTH,Integrerade komponenter och kretsar(Swepub:kth)u1wkv8xt (author)
  • Liu, RanState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University (author)
  • Östling, MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u1u0kle4 (author)
  • Zhang, Shi-LiKTH,Integrerade komponenter och kretsar(Swepub:kth)u1a28qyq (author)
  • KTHIntegrerade komponenter och kretsar (creator_code:org_t)

Related titles

  • In:IEEE Electron Device Letters28:7, s. 565-5680741-31061558-0563

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By the author/editor
Zhang, Zhen
Qiu, Zhijun
Liu, Ran
Östling, Mikael
Zhang, Shi-Li
About the subject
ENGINEERING AND TECHNOLOGY
ENGINEERING AND ...
and Electrical Engin ...
and Other Electrical ...
Articles in the publication
IEEE Electron De ...
By the university
Royal Institute of Technology

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