Electronic structure and electron dynamics at the GaSb(001) surface studied by femtosecond pump-and-probe pulsed laser photoemission spectroscopy

• Transiently excited electron states at the GaSb(001) surface have been studied by means of time- and angle-resolved photoemission spectroscopy based on a femtosecond laser system. A normally unpopulated surface electron state has been found at similar to 250 meV above the valence band maximum with a strong confinement at the center of the surface Brillouin zone. The lifetime of transiently excited carriers at the intergap surface states has been found to be similar to 11 ps, associated with rapid carrier diffusion.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Annan teknik -- Övrig annan teknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)

Nyckelord

Angle-resolved photoemission; Gallium antimonide; Laser methods; Photoelectron emission; Surface states; Diffusion; Electrodynamics; Electronic structure; Laser theory; Photoemission; Spectroscopic analysis; Semiconducting gallium compounds

Material physics with surface physics

Materialfysik med ytfysik

Publikations- och innehållstyp

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