SwePub
Sök i LIBRIS databas

  Extended search

id:"swepub:oai:DiVA.org:kth-82999"
 

Search: id:"swepub:oai:DiVA.org:kth-82999" > 1.3 μm VCSELs :

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist
  • Gilet, Ph. (author)

1.3 μm VCSELs : InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells and InAs/GaAs quantum dots- Three candidates as active material

  • Article/chapterEnglish2007

Publisher, publication year, extent ...

  • San Jose, CA :SPIE,2007
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-82999
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-82999URI
  • https://doi.org/10.1117/12.700403DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:ref swepub-contenttype
  • Subject category:kon swepub-publicationtype

Notes

  • Sponsors: SPIE. QC 20120228
  • In this article, we report our results on 1.3ÎŒm VCSELs for optical interconnection applications. Room temperature continuous-wave lasing operation is demonstrated for top emitting oxide-confined devices with three different active materials, highly strained InGaAs/GaAs(A) and GalnNAs/GaAs (B) multiple quantum wells (MQW) or InAs/GaAs (C) quantum dots (QD). Conventional epitaxial structures grown respectively by Metal Organic Vapour Phase Epitaxy (MOVPE), Molecular Beam Epitaxy (MBE) and MBE, contain rully doped GaAs/AlGaAs DBRs. All three epilayers are processed in the same way. Current and optical confinement are realized by selective wet oxidation. Circular apertures from 2 ÎŒm to 16 ÎŒm diameters are defined. At room temperature and in continuous wave operation, all three systems exhibit lasing operation at wavelengths above 1 275nm and reached 1 300nm for material (A). Typical threshold currents are in the range [1-10]mA and are strongly dependent firstly on oxide diameter and secondly on temperature. Room temperature cw maximum output power corresponds respectively to 1.77mW, 0.5mW and 0.6mW. By increasing driving current, multimode operation occurs at different level depending on the oxide diameter. In case (A), non conventional modal behaviors will be presented and explained by the presence of specific oxide modes. Thermal behaviors of the different devices have been compared. In case (A) and (C) we obtain a negative T0. We will conclude on the different active materials in terms of performances with respect to 1300nm VCSEL applications.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Pougeoise, E. (author)
  • Grenouillet, L. (author)
  • Grosse, Ph. (author)
  • Olivier, N. (author)
  • Poncet, S. (author)
  • Chelnokov, A. (author)
  • Gerard, J. M. (author)
  • Stevens, R. (author)
  • Hamelin, R. (author)
  • Hammar, MattiasKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1jfzgcj (author)
  • Berggren, JesperKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u13fhsee (author)
  • Sundgren, PetrusKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1klj3sz (author)
  • KTHMikroelektronik och Informationsteknik, IMIT (creator_code:org_t)

Related titles

  • In:Vertical - Cavity Surface - Emitting Lasers XISan Jose, CA : SPIE, s. F4840-F4840

Internet link

To the university's database

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view