1.3-ÎŒm InGaAs(N)/GaAs vertical-cavity lasers

• In this work we present performance characteristics of metalorganic vapor-phase epitaxy grown GaInNAs and InGaAs quantum-well (QW) vertical-cavity lasers (VCLs) for 1.3-ÎŒm applications. The InGaAs VCLs emit in a wavelength range from 1200 to somewhat above 1260 nm, while the GaInNAs VCLs operate from 1265 to 1303 nm. The InGaAs VCLs are based on highly strained InGaAs double QWs, with photoluminescence (PL) maximum at around 1190 nm, and extensive negative gain-cavity detuning. As a consequence, these devices are strongly temperature sensitive and the minimum threshold current is found at very high temperature (∌90-100°C). Both kind of VCLs work continuous-wave well above 100°C, and while the InGaAs VCLs reach slightly higher light output power, they show significantly larger threshold currents. In addition, the large device detuning also has profound effects on the high-frequency response. Nevertheless, for a 1260-nm device, 10 Gb/s transmission is demonstrated in a back-to-back configuration. We also show that by further optimization of the InGaAs QWs the PL peak wavelength can be extended to at least 1240 nm. The incorporation of such QWs in the present VCL structure should considerably improve the device performance, resulting in higher light output power, lower threshold current, and reduced temperature sensitivity with a shift of the minimum threshold current towards room temperature, thus approaching standard VCL tuning.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

GaInNAs

Highly strained InGaAs

Long wavelength

Quantum-well laser

Vertical-cavity laser

Light transmission

Photoluminescence

Semiconducting gallium arsenide

Semiconducting indium gallium arsenide

Semiconductor quantum wells

Quantum-well lasers

Lasers

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