Morphological instability of GaInNAs quantum wells on AlGaAs/GaAs distributed bragg reflectors grown by metal-organic vapor-phase epitaxy

• We report on the optical and structural integrity of metal-organic vapor-phase epitaxy grown GaInNAs/GaAs single quantum wells on AlGaAs/GaAs distributed Bragg reflectors (DBRs). Surface morphology as measured by atomic force microscopy and quantum well photoluminescence were investigated for different numbers of DBR periods and different DBR-growth temperatures. Increased number of DBR periods severely degrades the surface morphology and photoluminescence. However, a significant improvement was obtained by lowering the growth temperature of the DBRs from 745 to 680°C.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Atomic force microscopy

Bragg cells

Degradation

Metallorganic vapor phase epitaxy

Morphology

Optical properties

Photoluminescence

Semiconducting aluminum compounds

Semiconducting gallium compounds

Semiconductor growth

Bragg reflectors

Morphological instability

Semiconductor quantum wells

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