InP-based 1.55ÎŒm Resonant Cavity Light-Emitting Diode with two Epitaxial Mirrors

• We report on the fabrication and characterisation of a resonant cavity light-emitting diode (RCLED) operating at 1.55 ÎŒm. As compared to conventional LEDs such devices merit from a higher emission intensity with a more narrow linewidth and are therefore promising as light sources in fibre optical communication systems. The present design is based on an InGaAsP multi-quantum well structure and utilises two InGaAsP/InP epitaxial distributed Bragg reflectors (DBRs), one 50 periods high reflectivity bottom mirror and a top out-coupling mirror with lower reflectivity. This gives the advantage of top-emission combined with the possibility of achieving very narrow linewidth. The process is fully monolithic and full wafer scale compatible.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Cavity resonators

Epitaxial growth

Light reflection

Mirrors

Semiconducting indium gallium arsenide

Semiconducting indium phosphide

Semiconductor quantum wells

Resonant cavity light emitting diodes

Light emitting diodes

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