Scanning tunneling microscopy of CdSe single crystal cleaved and "real" surface

• Ultrahigh vacuum-cleaved and as-grown surfaces of CdSe single crystals were investigated by scanning tunneling microscopy. The single crystals were grown by Reynolds-Green method. Striations and terrace-step structure have been found. The surface atomic geometry was found and investigated. The (1120) face geometry (structure formed by elementary cell of 0.75 × 0.7 nm2) as well as other type structures (e.g., 2.1 × 0.75 nm2 elementary cell) have been determined. The variations of the band gap at the surface have been found. The band values in the range 2.0-2.6 eV on a cleaved surface and 1.1-2.0 eV on an as-grown surface were measured and explained as being the influence of surface relaxation and gas adsorption. © 1994.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Band structure

Crystal atomic structure

Energy gap

Epitaxial growth

Microscopic examination

Band gap

Scanning tunneling microscopy

Semiconducting cadmium selenide

Surface relaxation

Semiconducting cadmium compounds

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