Epitaxial growth of Sn on Si(111) : A direct atomic-structure determination of the (2 √3 ×2 √3) R30° reconstructed surface

• Scanning tunneling microscopy (STM) has been used to determine the surface atomic structure of Si(111)(23 ×2 3) -Sn. The topographic images show four resolved atoms in each (2 3 ×2 3) unit cell, and the structure is found to be onefold symmetric. Together with coverage measurements, the STM analysis implies that the reconstructed surface is an epitaxial Sn two-layer structure, where the atoms adopt a bonding configuration characteristic of -Sn. A three-dimensional structure model, in accordance with the obtained results, is proposed. © 1991 The American Physical Society.

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NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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