SURFACE ELECTRONIC-STRUCTURE OF INAS(110)

NR 20140805
The electronic structure of the InAs(I 10) cleavage surface has been studied by angle-resolved photoelectron spectroscopy. The bulk band structure has been calculated utilizing the augmented plane-wave method and then the bulk bands have been projected along the lines GAMMA-XBARBAR and GAMMA-YBARBAR of the surface Brillouin zone (SBZ). Three surface-related structures have been found and their initial state versus k parallel-to dispersion along the line GAMMA-XBARBAR and the line GAMMA-YBARBAR of the SBZ has been determined. The structures are identified as A5, A4, and A3 along GAMMA-XBARBAR and as A5, A4, and C2 along GAMMA-YBARBAR.

ANDERSEN, JN (författare)
PERSSON, PES (författare)
KARLSSON, Ulf OKTH,Skolan för informations- och kommunikationsteknik (ICT),Materialfysik (författare)
KTHSkolan för informations- och kommunikationsteknik (ICT) (creator_code:org_t)

Av författaren/redakt...: ANDERSSON, CBM; ANDERSEN, JN; PERSSON, PES; KARLSSON, Ulf O

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