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Iodine reaction and...
Iodine reaction and passivation of the Ge(111) surface
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Gothelid, M (författare)
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LeLay, G (författare)
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Wigren, C (författare)
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Bjorkqvist, M (författare)
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- Karlsson, Ulf O (författare)
- KTH,Skolan för informations- och kommunikationsteknik (ICT),Materialfysik
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(creator_code:org_t)
- 1997
- 1997
- Engelska.
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 371:2-3, s. 264-276
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The Ge(111)-I surface has been studied at different I coverages ranging from 0.05 hit up to saturation, and different annealing temperatures, using photoelectron spectroscopy (PES) and scanning tunneling microscopy (STM). At saturation the surface is covered with I in the top site and Gel, species in the bridge site, coexisting with small islands/clusters comprising GeI2, giving a total coverage of I in GeIx species of 1.15 ML. The chemically induced shifts in the Ge 3d core level are 0.39 eV per attached I atom. The coverage determined from the I 4d core level is higher than 1.15 ML, which we explain by the presence of I not bound to Ge. Annealing at 200 degrees C decreases the iodine coverage, whereas the I 4d and Ge 3d line profiles are practically unchanged. Further heating desorbs the iodide species and restores the virgin c(2 x 8) structure.
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