Bulk and surface electronic structure of InAs(110)

NR 20140805
The InAs(110) cleavage surface has been investigated by angle-resolved photoelectron spectroscopy. A separation between the In 4d(5/2) bulk component and the valence band maximum of 16.8 eV is found to be consistent with normal emission spectra. Experimental energy band dispersions, E-i(k), for the four bulk valence bands are established along the Sigma-line of the bulk Brillouin zone. A bulk band structure calculation utilizing the augmented plane-wave method is made. The experimental and calculated E-i(k) dispersions are found to be in good agreement with each other. E-i(k(parallel to)) dispersions for two surface-related structures are established along the lines <(Gamma)over bar>-(M) over bar and (Y) over bar-(M) over bar of the surface Brillouin zone. (C) 1998 Elsevier Science B.V.

Andersen, J N (författare)
Persson, P E S (författare)
Karlsson, Ulf OKTH,Skolan för informations- och kommunikationsteknik (ICT),materialfysik (författare)
KTHSkolan för informations- och kommunikationsteknik (ICT) (creator_code:org_t)

Av författaren/redakt...: Andersson, C B M; Andersen, J N; Persson, P E S; Karlsson, Ulf O

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