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FORMATION OF SM SIL...
FORMATION OF SM SILICIDES ON SI(111) - COMPOSITION AND EPITAXY
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- Nyholm, R. (författare)
- Lund University,Lunds universitet,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Andersen, J. N. (författare)
- Lund University,Lunds universitet,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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NYHOLM, R (författare)
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- KARLSSON, Ulf O (författare)
- KTH Royal Institute of Technology,KTH,Skolan för informations- och kommunikationsteknik (ICT),Materialfysik
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(creator_code:org_t)
- 1993
- 1993
- Engelska.
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 293:3, s. 254-259
- Relaterad länk:
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http://dx.doi.org/10...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://lup.lub.lu.s...
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Abstract
Ämnesord
Stäng
- The formation of Sm silicides on Si(111) by means of solid phase epitaxy has been studied with low energy electron diffraction, Auger electron spectroscopy and photoelectron spectroscopy of the Sm 4f level and Si 2p level. A limited reaction is found to occur already at room temperature whereas at higher temperatures a strongly intermixed Sm/Si layer showing some long range order is formed. The Sm atoms of this intermixed phase are found to be completely trivalent in accordance with expectations. The intermixed layer consists of two silicides with different compositions, one of them being SmSi2-x, the other being tentatively ascribed to SmSi.
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