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Nitride formation a...
Nitride formation and dangling-bond passivation on Si(111)-(7x7) with NH3
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Bjorkqvist, M (författare)
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Gothelid, M (författare)
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- Karlsson, Ulf O (författare)
- KTH,Skolan för informations- och kommunikationsteknik (ICT),Materialfysik
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(creator_code:org_t)
- 1997
- 1997
- Engelska.
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Ingår i: Surface Science. - 0039-6028 .- 1879-2758. ; 394:1-3, s. L155-L161
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Thermal nitridation of the Si(111)-(7 x 7) reconstructed surface with ammonia has been investigated using scanning tunneling microscopy (STM). True nitride formation in the form of ring-like structures as in stoichiometric silicon nitride (Si3N4) was observed at imperfections on the surface, which otherwise preserved the characteristics of the (7 x 7) reconstruction. However, the ratio of reacted adatoms in the reconstruction never exceeded similar to 50%, indicative of a frustrated saturation behavior for the adatom dangling bonds in the Si(111)-(7 x 7)-NH3 reaction system. (C) 1997 Elsevier Science B.V.
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