A novel UMOS capacitor test structure for SiC devices

• In this paper we propose the use of U-grooved MOS capacitors to investigate oxides intended for U-grooved MOSFETs and IGBTs in silicon carbide. The UMOS capacitor uses only two mask layers, and has vertically etched walls and a gate contact that overlaps the step. We have manufactured UMOS capacitors in n-type 6H SiC with dry thermal gate oxides, and compared the capacitance voltage characteristics to those of flat reference capacitors. It was found that the general appearance of capacitance-voltage curves was unchanged by the addition of the vertical grooves, although the leakage through the oxide was increased. The oxide thickness on the sidewalls was approximately the same as on the flat parts of the devices. Copyright © 1996 Elsevier Science Ltd.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Bipolar transistors

Capacitance

Capacitors

Electric contacts

Gates (transistor)

Oxides

Reactive ion etching

Semiconducting films

Semiconductor device manufacture

Semiconductor device structures

Silicon carbide

Silicon nitride

Capacitance voltage characteristics

Insulated gate bipolar transistors

Mask layers

Oxide thickness

Thermal gate oxides

U grooved MOS capacitors

MOSFET devices

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)