Comparison of SiO2 and AlN as gate dielectric for SiC MOS structures

• The electrical properties of silicon dioxide (thermal oxidation) and aluminum nitride (metal organic chemical vapor deposition) have been compared for use as gate dielectric for silicon carbide metal insulator semiconductor structures. High frequency capacitance voltage measurements at room temperature were used to investigate fixed charge and deep interface states. The deep interface states could be passivated with hydrogen if introduced during growth of silicon dioxide. Although results are promising for aluminum nitride, the morphology of the films grown so far do not allow a fair comparison with silicon dioxide.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Aluminum Nitride

Metal Organic Chemical Vapor Deposition

Silicon Dioxide

Thermal Oxidation

Current voltage characteristics

Dielectric films

Electric charge

Film growth

Interfaces (materials)

Metallorganic chemical vapor deposition

Morphology

Nitrides

Semiconductor device structures

Silica

Thermooxidation

Gate dielectrics

MOS devices

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)