Thermal stability of sputtered TiN as metal gate on 4H-SiC

• MOS-structures were made with TiN as metal gate on 4H-SiC. The thermal stability and electrical properties of this gate was determined by CV-measurements. Comparison with Al gates showed that TiN worked well as a gate metal on 4H-SiC. The hysteresis and density of the interface states were comparable for the two gate types. The n-type samples had low leakage and a flatband voltage of a few volts, while the p-type samples had high leakage and a fiatband voltage of around -20 V. The structure showed poor characteristics after a 700°C anneal for one hour, which is probably caused by the formation of titanium silicide. The TiN films had a lower content of nitrogen than expected, which could influence the stability.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

CV-Measurements

Gate Metal

MOS

Thermal Stability

TiN

Annealing

Capacitance measurement

Composition effects

Gates (transistor)

Hysteresis

Semiconducting films

Semiconducting silicon compounds

Silicon carbide

Thermal effects

Thermodynamic stability

Titanium nitride

Voltage measurement

Flatband voltage

Titanium silicide

MOS devices

Publikations- och innehållstyp

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