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Junction barrier Sc...
Junction barrier Schottky diodes in 4H-SiC and 6H-SiC
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Dahlquist, Fanny (author)
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- Zetterling, Carl-Mikael (author)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
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Rottner, K. (author)
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(creator_code:org_t)
- Trans Tech Publications Inc. 1998
- 1998
- English.
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In: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 264-268:PART 2, s. 1061-1064
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Abstract
Subject headings
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- The Junction Barrier Schottky (JBS) diode in silicon carbide is a promising candidate for a low-leakage power rectifier for high switching frequencies and elevated temperature operation. It has the advantage of a low forward voltage drop while keeping a low leakage current at high blocking voltage. JBS devices have been fabricated in 4H SiC and 6H SiC and then electrically characterised in comparison with pn and Schottky diodes on the same wafer. The JBS devices reached blocking voltages up to 1.0 kV at a leakage current density of 13 ÎŒA/cm2 and the forward conduction was limited by an on-resistance close to the theoretical value.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Junction Barrier Schottky
- Power Rectifier
- Current density
- Electric rectifiers
- Leakage currents
- Power electronics
- Semiconducting silicon compounds
- Semiconductor junctions
- Silicon carbide
- Forward voltage drop
- Power rectifiers
- Schottky barrier diodes
Publication and Content Type
- ref (subject category)
- art (subject category)
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