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  • Wang, L. (author)

Study of optical characteristics of damage in oxygen-implanted 6H-SiC

  • Article/chapterEnglish1999

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  • 1999
  • printrdacarrier

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  • LIBRIS-ID:oai:DiVA.org:kth-85414
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-85414URI
  • https://doi.org/10.1023/A:1006627610829DOI

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  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

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  • References: MÃŒller, G., Krötz, G., Niemann, E., (1994) Sensors and Actuators A, 43, p. 259; Brown, D.M., Downey, E., Grezzo, M., Kretchmer, J., Krishnamrthy, V., Hennessy, W., Michon, G., (1996) Solid State Electronics, 59, p. 1531; Wesch, W., (1996) Beam Interactions with Materials and Atoms, 116, p. 305; Kimoto, T., Nakajima, T., Matsunami, H., Nakata, T., Inoue, M., (1996) Appl. Phys. Lett., 69, p. 1113; Nadella, R.K., Capano, M.A., (1997) Appl. Phys. Lett., 70, p. 886; Alok, D., Baliga, B.J., (1997) J. Electrochem. Soc., 144, p. 1135; Alok, D., Baliga, B.J., (1997) J. Electrochem. Soc., 26, p. 134; Grimaldi, M.G., Calcagno, L., Musumeci, P., Frangis, N., Van Landuyt, J., (1997) J. Appl. Phys., 81, p. 7181; Ninomiya, S., Adachi, S., (1994) Jpn. J. Appl. Phys., 33, p. 2479; Capelletti, R., Miotello, A., Ossi, P.M., (1997) J. Appl. Phys., 81, p. 146; Musumeci, P., Calcagno, L., Grimaldi, M.G., Foti, G., (1996) Appl. Phys. Lett., 69, p. 468; Laine, A.D., Mezzasalma, A.M., Rizzo, S., Mondio, G., (1996) Beam Interactions with Materials and Atoms, 116, p. 338 NR 20140805
  • Oxygen ions, with an energy of 70 keV, and doses ranging from 5×1013 to 5×1015 cm-2, were implanted into 6H SiC. The damage energies were calculated as 0.93-93 eV/atom with the doses respectively. The dielectric function obtained from spectroscopic ellipsometry were quite sensitive to ion irradiation of the surface, while the first order Raman spectroscopy decreased in intensity with increasing O+ ion dose. The damage behavior characterized by optical measurements was in good agreement with characterization by Rutherford backscattering spectrometry and channeling and atomic force microscopy.

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  • Huang, J. (author)
  • Lin, C. (author)
  • Zou, S. (author)
  • Zheng, Y. (author)
  • Wang, X. (author)
  • Huang, D. (author)
  • Zetterling, Carl-MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u15o61ns (author)
  • Östling, MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u1u0kle4 (author)
  • KTHIntegrerade komponenter och kretsar (creator_code:org_t)

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  • In:Journal of materials science letters18:12, s. 979-9820261-80281573-4811

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