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  • Hong, J. (author)

Plasma chemistries for high density plasma etching of SiC

  • Article/chapterEnglish1999

Publisher, publication year, extent ...

  • Charlottesville, VA, USA,1999
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:kth-85415
  • https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-85415URI

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  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • References: Casady, J.B., Agarwal, A.K., Rowland, L.B., Seshadri, S., Siegiez, R.R., Mani, S.S., Sheridan, D.C., Brandt, C.D., (1998) Mater. Res. Soc. Symp. Proc., 483, p. 27. , Pittsburgh, PA: Mater. Res. Soc; Agarwal, A.K., Seshadri, S., Rowland, L.B., (1997) IEEE Electron Dev. Lett., 18, p. 592; Palmour, J.W., Edmond, J.A., Kong, H.S., Carter C.H., Jr., (1994) SiC and Related Materials, 137, p. 499. , Bristol, U.K.: Institute of Physics; Baliga, B.J., (1996) Power Semiconductor Devices, , Boston: PWS Publishing; Ueno, K., Asai, R., Tsuji, T., (1998) IEEE Electron Dev. Lett., EDL-19, p. 244; Spitz, J., Melloch, M.R., Cooper J.A., Jr., Capano, M., (1998) IEEE Electron. Dev. Lett., EDL-19, p. 100; Neudeck, P.G., (1995) J. Electron. Mater., 24, p. 283; Shenoy, J.N., Melloch, M.R., Cooper J.A., Jr., (1997) IEEE Electron. Dev. Lett., EDL-18, p. 93; Baliga, B.J., (1996) Inst. Phys. Conf. Ser., 142, p. 1. , Bristol, U.K.: Institute of Physics; Raghunathan, R., Baliga, B.J., (1998) IEEE Electron Dev. Lett., EDL-19, p. 71; Agarwal, A.K., Casady, J.B., Rowland, L.B., Valek, W.F., White, M.H., Brandt, C.D., (1997) IEEE Electron. Dev. Lett., EDL-18, p. 586; Konstantinov, A.O., Ivanov, P.V., Nordell, N., Karlsson, S., Harris, C.I., (1997) IEEE Electron. Dev. Lett., EDL-18, p. 521; Casady, J.B., Johnson, R.W., (1996) Solid-state Electron., 39, p. 1409; Weitzel, C.E., Moore, K.E., (1998) J. Electron. Mater., 27, p. 365; Capano, M.A., Trew, R.J., (1997) MRS Bulletin, 22, p. 19; Shor, J.S., Kurtz, A.D., Grimberg, I., Weiss, B.Z., Osgood, R.M., (1997) J. Appl. Phys., 81, p. 1546; Collins, D.H., Harris, G.L., Wongchotigul, K., Zhang, D., Chen, N., Taylor, C., (1996) Inst. Phys. Conf. Ser., 142, p. 617. , Bristol, U.K.: Institute of Physics; Yih, P.H., Steckl, A.J., (1995) J. Electrochem. Soc., 142, p. 312; Casady, J.B., Luckowski, E.D., Bozack, M., Sheridan, D., Johnson, R.W., Williams, J.H., (1996) J. Electrochem. Soc., 143, p. 750; Steckl, A.J., Yih, P.H., (1992) Appl. Phys. Lett., 60, p. 1966; Casady, J.B., Luckowski, E.D., Bozack, M., Sheridan, D., Johnson, R.W., Williams, J.H., (1996) Inst. Phys. Conf. Ser., 142, p. 625. , Bristol, U.K.: Institute of Physics; Luther, B.P., Ruzyllo, J., Miller, D.L., (1993) Appl. Phys. Lett., 63, p. 171; Lavois, F., Lassagne, P., Locabelli, M.L., (1996) Appl. Phys. Lett., 69, p. 236; Sadiyath, R., Wright, R.L., Chaudry, M.I., Babu, S.V., (1991) Appl. Phys. Lett., 58, p. 1053; Wu, J., Darsons, J.D., Evans, D.R., (1995) J. Electrochem. Soc., 142, p. 669; Cao, L., Li, B., Zhao, J.H., (1997) SiC and Related Compounds Conf. Stockholm, , Sweden; Wang, J.J., Lambers, E.S., Pearton, S.J., Östling, M., Zetterling, C.-M., Grow, J.M., Ren, F., (1998) Solid-state Electron., 42, p. 743; Flemish, J.R., Xie, K., Zhao, J., (1994) Appl. Phys. Lett., 64, p. 2315; Flemish, J.R., Xie, K., Buchwald, W., Casas, L., Zhao, J.H., McLane, G.F., Dubey, M., (1994) Mater. Res. Soc. Sump. Proc., 339, p. 145. , Pittsburgh, PA: Mater. Res. Soc; Flemish, J.R., Xie, K., (1996) J. Electrochem. Soc., 143, p. 2620; Xie, K., Flemish, J.R., Zhao, J.H., Buchwald, W.R., Casas, L., (1995) Appl. Phys. Lett., 67, p. 368; McDaniel, G.F., Lee, J.W., Lambers, E.S., Pearton, S.J., Holloway, P.H., Ren, F., Grow, J.M., Wilson, R.G., (1997) J. Vac. Sci. Technol. A, 14, p. 885; Flemish, J.R., Xie, K., McLane, G.F., (1996) Mater. Res. Soc. Symp. Proc., 421, p. 153. , Pittsburgh, PA: Mater. Res. Soc; Ren, F., Grow, J.M., Bhaskaran, M., Lee, J.W., Vartuli, C.B., Lothian, J.R., Flemish, J.R., (1996) Mater. Res. Soc. Symp. Proc., 421, p. 251. , Pittsburgh, PA: Mater. Res. Soc; Wang, J.J., Lambers, E.S., Pearton, S.J., Östling, M., Zetterling, C.-M., Grow, J.M., Ren, F., Shul, R.J., (1998) J. Vac. Sci. Technol. A, 16, p. 2605 NR 20140805
  • A variety of different plasma chemistries, including SF6, Cl2, ICI, and IBr, have been examined for dry etching of 6H-SiC in high ion density plasma tools (inductively coupled plasma and electron cyclotron resonance). Rates up to 4500 angstroms·min-1 were obtained for SF6 plasmas, while much lower rates (≀800 angstroms·min-1) were achieved with Cl2, ICI, and IBr. The F2-based chemistries have poor selectivity for SiC over photoresist masks (typically 0.4-0.5), but Ni masks are more robust, and allow etch depths ≥10 ÎŒm in the SiC. A micromachining process (sequential etch/deposition steps) designed for Si produces relatively low etch rates (<2,000 angstroms·min-1) for SiC.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Shul, R. J. (author)
  • Zhang, L. (author)
  • Lester, L. F. (author)
  • Cho, H. (author)
  • Hahn, Y. B. (author)
  • Hays, D. C. (author)
  • Jung, K. B. (author)
  • Pearton, S. J. (author)
  • Zetterling, Carl-MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u15o61ns (author)
  • Östling, MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u1u0kle4 (author)
  • KTHIntegrerade komponenter och kretsar (creator_code:org_t)

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  • In:Journal of Electronic MaterialsCharlottesville, VA, USA28:3, s. 196-2010361-52351543-186X

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