Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process

Sponsors: Air Force Research Laboratories; Army Research Office; DARPA; ODDR and E(R) NR 20140805
Crystalline 3C-SiC thin films were successfully grown on (100) and (111) Si substrates by using ArF pulsed laser ablation from a SiC ceramic target combined with a vacuum annealing process. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) were employed to study the effect of annealing on the structure of thin films deposited at 800Â°C. It was demonstrated that vacuum annealing could transform the amorphous SiC films into crystalline phase and that the crystallinity was strongly dependent on the annealing temperature. For the samples deposited on (100) and (111) Si, the optimum annealing temperatures were 980 and 920Â°C, respectively. Scanning electron microscope (SEM) micrographs exhibited different characteristic microstructure for the (100) and (111) Si cases, similar to that observed for the carbonization layer initially formed in chemical vapor deposition of SiC films on Si. This also showed the presence of the epitaxial relationship of 3C-SiC[100]//Si[100] and 3C-SiC[111]//Si[111] in the direction of growth.

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
Annealing
Crystal growth
Crystal microstructure
Fourier transform infrared spectroscopy
Laser ablation
Pulsed laser applications
Semiconducting silicon
Semiconducting silicon compounds
Silicon carbide
Temperature
Vacuum applications
X ray diffraction analysis
Annealing temperature
Carbonization layer
Crystalline phase
Pulsed laser deposition
Vacuum annealing process
Thin films

Wang, L. (författare)
Wen, J. (författare)
Wang, Y. (författare)
Lin, C. (författare)
Zetterling, Carl-MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u15o61ns (författare)
Östling, MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u1u0kle4 (författare)
KTHIntegrerade komponenter och kretsar (creator_code:org_t)

Ingår i:Materials Research Society Symposium - ProceedingsSan Francisco, CA, USA, s. 207-212

Av författaren/redakt...: Huang, J.; Wang, L.; Wen, J.; Wang, Y.; Lin, C.; Zetterling, Carl ...; visa fler...; Östling, Mikael; visa färre...

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