Comparison of F2 plasma chemistries for deep etching of SiC

• A number of F2-based plasma chemistries (NF3, SF6, PF5 and BF3) were investigated for high rate etching of SiC. The most advantageous of these is SF6, based on the high rate (0.6 ÎŒm·min-) it achieves and its relatively low cost compared to NF3. The changes in electrical properties of the near-surface region are relatively minor when the incident ion energy is kept below approximately 75 eV. At a process pressure of 5 m Torr, the SiC etch rate falls-off by ∌15% in 30 ÎŒm diameter via holes compared to larger diameter holes (> 60 ÎŒm diameter) or open areas on the mask.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Electric properties

Fluorine compounds

Inductively coupled plasma

Ions

Plasma etching

Pressure effects

Diameter holes

Ion energy

Plasma chemistry

Silicon carbide

Publication and Content Type

ref (subject category)

kon (subject category)