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Extrinsic base desi...
Extrinsic base design of SiC bipolar transistors
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- Danielsson, Erik (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Domeij, Martin (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Zetterling, Carl-Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Östling, Mikael (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Schöner, Adolf (author)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- Trans Tech Publications Inc. 2004
- 2004
- English.
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In: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. ; 457-460:II, s. 1117-1120
- Related links:
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http://www.scopus.co...
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Subject headings
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- The SiC npn bipolar junction transistor (BJT) is a very promising device for high voltage and high power switches. The SiC BJT has, due to junction voltage cancellation, potentially a low on-resistance. However, the high resistivity in the base layer can induce a locally forward biased base collector junction and a premature current from the base to collector at on-state. In this work we propose a new technique to fabricate the extrinsic base using regrowth of the extrinsic base layer. This technique can put the highly doped region of the extrinsic base a few tenths of a micron from the intrinsic region. We also propose a new mobility model in our simulations to correctly account for the ionized impurities in minority carrier transport and elevated temperature.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Bipolar transistors
- Mobility
- Regrowth
- Collector junctions
- Junction voltage
- Premature current
- Charge carriers
- Concentration (process)
- Electric conductivity
- Electric potential
- Electric resistance
- Electron mobility
- Ionization
- Product design
- Silicon carbide
- Temperature control
Publication and Content Type
- ref (subject category)
- art (subject category)
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