SiC bipolar power transistors: Design and technology issues for ultimate performance

SiC bipolar power transistors : Design and technology issues for ultimate performance

QC 20120214
Silicon carbide (SiC) semiconductor devices for high power are becoming more mature and are now commercially available as discrete devices. Schottky diodes have been on the market since a few years but also bipolar junction transistors (BJTs), JFETs and MOSFETs are now reaching the market. The interest is rapidly growing for these devices in high power and high temperature applications. The BJTs have low conduction losses, fast switching capability, operate in normally-off mode, have high radiation hardness, and can handle high power density.This paper will review the current state of the art in active switching device performance with special emphasis on BJTs. Device performance has been demonstrated over a wide temperature interval. A very important feature in high power switch applications is the low on-resistance of a device. Better material quality and epi processes suppress the amount of basal plane dislocations to avoid stacking fault formation generated during high current injection. This has long been a concern for bipolar SiC devices but several research reports and long term reliability measurements of pn-junctions show that the bipolar degradation problem can be solved by a fine-tuned epitaxial technique. A discussion on surface passivation control is included. Finally, an example of a power switching module is given also demonstrating the excellent paralleling capability of BJTs.

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
Basal plane dislocations
Bipolar junction transistor
Conduction loss
Design and technology
Device performance
Discrete devices
Epitaxial techniques
Fast switching
High currents
High power density
High power switch
High-power
Long term
Material quality
MOSFETs
Off mode
On-resistance
P-n junction
Power switching modules
Power transistors
Radiation hardness
Reliability measurements
Research reports
Schottky diodes
SiC devices
State of the art
Surface passivation
Switching devices
Temperature intervals
Bipolar transistors
Equipment
High temperature applications
MOSFET devices
Passivation
Power electronics
Schottky barrier diodes
Semiconducting silicon
Semiconductor device manufacture
Semiconductor junctions
Silicon carbide
Switching circuits
Tunnel diodes
Semiconducting silicon compounds

Domeij, MartinKTH,Integrerade komponenter och kretsar(Swepub:kth)u13cuycd (författare)
Zaring, Carina (författare)
Konstantinov, A. (författare)
Ghandi, RezaKTH,Integrerade komponenter och kretsar(Swepub:kth)u18ctjp5 (författare)
Buono, BenedottoKTH,Integrerade komponenter och kretsar(Swepub:kth)u1uk9vii (författare)
Hallen, AndersKTH,Integrerade komponenter och kretsar(Swepub:kth)u11ywmz1 (författare)
Zetterling, Carl-MikaelKTH,Integrerade komponenter och kretsar(Swepub:kth)u15o61ns (författare)
KTHIntegrerade komponenter och kretsar (creator_code:org_t)

Av författaren/redakt...: Östling, Mikael; Domeij, Martin; Zaring, Carina; Konstantinov, A.; Ghandi, Reza; Buono, Benedotto; visa fler...; Hallen, Anders; Zetterling, Carl ...; visa färre...

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