High performance SiGeC HBT technology for radio frequency applications

QC 20120302
In this paper, the current status of SiGeC bipolar technologies for high-speed and wireless applications is reviewed. The key process features and radio frequency (RF) performance of advanced SiGe bipolar processes are summarized. The different approaches to form a self-aligned base-emitter structure with minimum parasitics are discussed. SiGe:C epitaxy allows very good profile control of the narrow base doping peak, which enables cut-off frequencies above 300 GHz. Downscaling of device dimensions for improved RF performance is also investigated using TCAD simulations. Finally, novel device structures using SOI substrates are discussed.

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
300 GHz; HBT technology; SOI substrates; SiGe:C; TCAD; device dimension downscaling; epitaxy; high-speed bipolar processes; narrow base doping peak profile control; parasitics minimization; radio frequency devices; self-aligned base-emitter structure; Ge-Si alloys; carbon; doping profiles; epitaxial growth; heterojunction bipolar transistors; semiconductor materials; silicon-on-insulator; submillimetre wave transistors; technology CAD (electronics);

Haralson, ErikKTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u1bz5891 (författare)
Malm, Gunnar,1972-KTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u13lag9j (författare)
KTHMikroelektronik och informationsteknik, IMIT (creator_code:org_t)

Av författaren/redakt...: Östling, Mikael; Haralson, Erik; Malm, Gunnar, 19 ...

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