Epitaxial lateral overgrowth of InP in micro line and submicro mesh openings

• Towards achieving a large area of InP on silicon, a study of ELOG of InP on InP has been undertaken on lines with different orientations and with openings that are 100 mu m long and 10 gm wide. This knowledge has been transposed on sub-micro mesh structures. By this method we have obtained 2 gm thick InP on a mesh patterned InP. The layer exhibits room temperature photoluminescence (PL) with a full width half maximum of 24 nm. We propose that this intensity can be increased if nano-sized openings are used.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Epitaxial growth

Photoluminescence

Silicon

Temperature measurement

Epitaxial lateral overgrowth

Submicro mesh structures

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)