GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth

• GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GaInP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

NATURVETENSKAP  -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)

Keyword

850 nm; CW operation; GaAs-AlGaAs; GaAs/AlGaAs buried-heterostructure laser diodes; GaInP:Fe; GaInP:Fe burying layer; etched laser mesas; high-speed characteristics; hydride vapor phase epitaxy; in-plane lasers; performance; regrowth; semi-insulating GaInP:Fe regrowth; vertical-cavity surface-emitting lasers; III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; iron; optical fabrication; semiconductor growth; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth

Publication and Content Type

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