High-performance 1.2- mu;m highly strained InGaAs/GaAs quantum well lasers

• The growth and characterisation of high-performance 1.2- mu;m highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145 deg;C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

NATURVETENSKAP  -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)

Nyckelord

1.2 micron; 1230 nm; 145 degC; 150 K; 200 mW; CW operation; InGaAs-GaAs; VPE growth; characterisation; high characteristic temperature; high output power; high-performance SQW LDs; highly strained InGaAs/GaAs SQW; low-pressure MOVPE; net modal gain measurement; ridge-waveguide lasers; single quantum well laser diodes; III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser transitions; optical fabrication; quantum well lasers; ridge waveguides; semiconductor growth; vapour phase epitaxial growth; waveguide lasers

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