pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions

• A new source/drain formation concept based on selective Si etching followed by selective regrowth of in situ B-doped Si(1-x)Ge(x)is presented. Both process steps are performed in the same reactor to preserve the gate oxide. Well-behaved transistors are demonstrated with a negligibly low gate-to-substrate leakage current.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

pMOS

shallow junctions

CVD

Si1-xGex

Electronics

Elektronik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)