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- Isheden, ChristianKTH,Mikroelektronik och Informationsteknik, IMIT (author)
pMOSFETs with recessed and selectively regrown Si1-xGex source/drain junctions
- Article/chapterEnglish2005
Publisher, publication year, extent ...
- Elsevier BV,2005
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-9103
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-9103URI
- https://doi.org/10.1016/j.mssp.2004.09.045DOI
Supplementary language notes
- Language:English
- Summary in:English
Part of subdatabase
- SwePubSwePub
Classification
Notes
- QC 20101027. Uppdaterad från in press till published (20101027).
- A new source/drain formation concept based on selective Si etching followed by selective regrowth of in situ B-doped Si(1-x)Ge(x)is presented. Both process steps are performed in the same reactor to preserve the gate oxide. Well-behaved transistors are demonstrated with a negligibly low gate-to-substrate leakage current.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- pMOS
- shallow junctions
- CVD
- Si1-xGex
- Electronics
- Elektronik
Added entries (persons, corporate bodies, meetings, titles ...)
- Hellström, Per-ErikKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1wc1lgb (author)
- von Haartman, MartinKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1dm4r2y (author)
- Radamson, Henry H.KTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1g2cqgr (author)
- Östling, MikaelKTH,Mikroelektronik och Informationsteknik, IMIT(Swepub:kth)u1u0kle4 (author)
- KTHMikroelektronik och Informationsteknik, IMIT (creator_code:org_t)
Related titles
- In:Materials Science in Semiconductor Processing: Elsevier BV8:1-3, s. 359-3621369-80011873-4081
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