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2.2 kV SiC BJTs with low V(CESAT) fast switching and short-circuit capability

Domeij, Martin (author)
KTH,Integrerade komponenter och kretsar
Zaring, C. (author)
Konstantinov, A. O. (author)
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Nawaz, M. (author)
Svedberg, J-O (author)
Gumaelius, K. (author)
Keri, I. (author)
Lindgren, A. (author)
Hammarlund, B. (author)
Östling, Mikael (author)
KTH,Integrerade komponenter och kretsar
Reimark, M. (author)
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 (creator_code:org_t)
2010
2010
English.
In: SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2. ; , s. 1033-1036
  • Conference paper (peer-reviewed)
Abstract Subject headings
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  • This paper reports large active area (15 mm(2)) 4H-SiC BJTS with a low V(CESAT)=0.6 V at 1(C)=20 A (J(C)=133 A/cm(2)) and an open-base breakdown voltage BV(CEO)=2.3 kV at T=25 degrees C. The corresponding room temperature specific on-resistance R(SP.ON)=4.5 m Omega cm(2) is to the authors knowledge the lowest reported value for a large area SiC BJT blocking more than 2 kV. The onstate and blocking characteristics were analyzed by device simulation and found to be in good agreement with measurements. Fast switching with VcE rise- and fall-times in the range of 20-30 ns was demonstrated for a 6 A 1200 V rated SiC BJT. It was concluded that high dynamic base currents are essential for fast switching to charge the BJT parasitic base-collector capacitance. In addition, 10 mu s short-circuit capability with V(CE)=800 V was shown for the 1200 V BJT.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Bipolar junction transistor
V(CESAT)
switching
safe operating area

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