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Physical properties...
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Mei, A BUniversity of Illinois, IL 61801 USA
(författare)
Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering
- Artikel/kapitelEngelska2013
Förlag, utgivningsår, omfång ...
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American Vacuum Society,2013
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printrdacarrier
Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:liu-102722
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-102722URI
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https://doi.org/10.1116/1.4825349DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
Anmärkningar
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Funding Agencies|Swedish Research Council (VR)||Swedish Government Strategic Research Area Grant in Materials Science (SFO Mat-LiU) on Advanced Functional Materials||
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Single-crystal ZrN films, 830 nm thick, are grown on MgO(001) at 450 degrees C by magnetically unbalanced reactive magnetron sputtering. The combination of high-resolution x-ray diffraction reciprocal lattice maps, high-resolution cross-sectional transmission electron microscopy, and selected-area electron diffraction shows that ZrN grows epitaxially on MgO(001) with a cube-on-cube orientational relationship, (001)(ZrN)parallel to(001)(MgO) and [100](ZrN)parallel to[100](MgO). The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm, in good agreement with reported results for bulk ZrN crystals. X-ray reflectivity results reveal that the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based on temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity rho(300K) of 12.0 mu Omega-cm, a temperature coefficient of resistivity between 100 and 300K of 5.6 x 10(-8) Omega-cm K-1, a residual resistivity rho(o) below 30K of 0.78 mu Omega-cm (corresponding to a residual resistivity ratio rho(300K)/rho(15K) = 15), and the layers exhibit a superconducting transition temperature of 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, xi(parallel to) = 18 nm and xi(perpendicular to) = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7 +/- 1.7 and 450 +/- 25 GPa.
Ämnesord och genrebeteckningar
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TECHNOLOGY
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TEKNIKVETENSKAP
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Howe, B MAir Force Research Lab, OH 45433 USA
(författare)
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Zhang, CUniversity of Illinois, IL 61801 USA
(författare)
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Sardela, MUniversity of Illinois, IL 61801 USA
(författare)
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Eckstein, J NUniversity of Illinois, IL 61801 USA
(författare)
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Hultman, LarsLinköpings universitet,Tunnfilmsfysik,Tekniska högskolan(Swepub:liu)larhu75
(författare)
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Rockett, AUniversity of Illinois, IL 61801 USA
(författare)
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Petrov, IUniversity of Illinois, IL 61801 USA
(författare)
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Greene, J EUniversity of Illinois, IL 61801 USA
(författare)
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University of Illinois, IL 61801 USAAir Force Research Lab, OH 45433 USA
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films: American Vacuum Society31:6, s. 061516-0734-21011520-8559
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