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Sökning: L773:1520 8559 OR L773:0734 2101 > (2010-2024) > Physical properties...

  • Mei, A BUniversity of Illinois, IL 61801 USA (författare)

Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering

  • Artikel/kapitelEngelska2013

Förlag, utgivningsår, omfång ...

  • American Vacuum Society,2013
  • printrdacarrier

Nummerbeteckningar

  • LIBRIS-ID:oai:DiVA.org:liu-102722
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-102722URI
  • https://doi.org/10.1116/1.4825349DOI

Kompletterande språkuppgifter

  • Språk:engelska
  • Sammanfattning på:engelska

Ingår i deldatabas

Klassifikation

  • Ämneskategori:ref swepub-contenttype
  • Ämneskategori:art swepub-publicationtype

Anmärkningar

  • Funding Agencies|Swedish Research Council (VR)||Swedish Government Strategic Research Area Grant in Materials Science (SFO Mat-LiU) on Advanced Functional Materials||
  • Single-crystal ZrN films, 830 nm thick, are grown on MgO(001) at 450 degrees C by magnetically unbalanced reactive magnetron sputtering. The combination of high-resolution x-ray diffraction reciprocal lattice maps, high-resolution cross-sectional transmission electron microscopy, and selected-area electron diffraction shows that ZrN grows epitaxially on MgO(001) with a cube-on-cube orientational relationship, (001)(ZrN)parallel to(001)(MgO) and [100](ZrN)parallel to[100](MgO). The layers are essentially fully relaxed with a lattice parameter of 0.4575 nm, in good agreement with reported results for bulk ZrN crystals. X-ray reflectivity results reveal that the films are completely dense with smooth surfaces (roughness = 1.3 nm, consistent with atomic-force microscopy analyses). Based on temperature-dependent electronic transport measurements, epitaxial ZrN/MgO(001) layers have a room-temperature resistivity rho(300K) of 12.0 mu Omega-cm, a temperature coefficient of resistivity between 100 and 300K of 5.6 x 10(-8) Omega-cm K-1, a residual resistivity rho(o) below 30K of 0.78 mu Omega-cm (corresponding to a residual resistivity ratio rho(300K)/rho(15K) = 15), and the layers exhibit a superconducting transition temperature of 10.4 K. The relatively high residual resistivity ratio, combined with long in-plane and out-of-plane x-ray coherence lengths, xi(parallel to) = 18 nm and xi(perpendicular to) = 161 nm, indicates high crystalline quality with low mosaicity. The reflectance of ZrN(001), as determined by variable-angle spectroscopic ellipsometry, decreases slowly from 95% at 1 eV to 90% at 2 eV with a reflectance edge at 3.04 eV. Interband transitions dominate the dielectric response above 2 eV. The ZrN(001) nanoindentation hardness and modulus are 22.7 +/- 1.7 and 450 +/- 25 GPa.

Ämnesord och genrebeteckningar

  • TECHNOLOGY
  • TEKNIKVETENSKAP

Biuppslag (personer, institutioner, konferenser, titlar ...)

  • Howe, B MAir Force Research Lab, OH 45433 USA (författare)
  • Zhang, CUniversity of Illinois, IL 61801 USA (författare)
  • Sardela, MUniversity of Illinois, IL 61801 USA (författare)
  • Eckstein, J NUniversity of Illinois, IL 61801 USA (författare)
  • Hultman, LarsLinköpings universitet,Tunnfilmsfysik,Tekniska högskolan(Swepub:liu)larhu75 (författare)
  • Rockett, AUniversity of Illinois, IL 61801 USA (författare)
  • Petrov, IUniversity of Illinois, IL 61801 USA (författare)
  • Greene, J EUniversity of Illinois, IL 61801 USA (författare)
  • University of Illinois, IL 61801 USAAir Force Research Lab, OH 45433 USA (creator_code:org_t)

Sammanhörande titlar

  • Ingår i:Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films: American Vacuum Society31:6, s. 061516-0734-21011520-8559

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