Model for electron-beam-induced crystallization of amorphous Me-Si-C (Me = Nb or Zr) thin films

• We use transmission electron microscopy (TEM) for in-situ studies of electronbeam-induced crystallization behavior in thin films of amorphous transition metal silicon carbides based on Zr (group 4 element) and Nb (group 5). Higher silicon content stabilized the amorphous structure while no effects of carbon were detected. Films with Nb start to crystallize at lower electron doses than Zr-containing ones. During the crystallization equiaxed MeC grains are formed in all samples with larger grains for Zr (~5nm) compared to Nb (~2nm). Eventually the sample stabilizes and the crystallization process stops. A model is presented where the metal carbide grains nucleate and grow while Si segregates into the remaining amorphous matrix. At a certain Si concentration in the matrix the graingrowth stops.

Ämnesord

NATURVETENSKAP  -- Kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences (hsv//eng)

Nyckelord

transmission electron microscopy (TEM); electron irradiation; radiation effects

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