Sökning: (WAKA:ovr) pers:(Hultman Lars)
> (2010-2014) >
Hf-Al-Si-N multilay...
Hf-Al-Si-N multilayers deposited by reactive magnetron sputtering from a single Hf0.6Al0.2Si0.2 target using high-flux, low-energy modulated substrate bias : film growth and properties
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- Fager, Hanna (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Howe, B.M. (författare)
- Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio, USA
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- Greczynski, Grzegorz (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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visa fler...
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- Jensen, Jens (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Mei, A. R. B. (författare)
- Frederick Seitz Materials Research Laboratory and Materials Science Department, University of Illinois, USA
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- Lu, Jun (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Greene, J.E. (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Petrov, Ivan (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Hultman, Lars (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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visa färre...
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(creator_code:org_t)
- 2014
- Engelska.
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- Hf1−x−yAlxSiyN (0≤x≤0.14, 0≤y≤0.13) single layers and multilayer films are grown on Si(001) at a substrate temperature Ts=250 °C using ultrahigh vacuum magnetically-unbalanced reactive magnetron sputtering from a single Hf0.6Al0.2Si0.2 target in a 5%-N2/Ar atmosphere at a total pressure of 20 mTorr (2.67 Pa). The composition and nanostructure of Hf1−x−yAlxSiyN is controlled during growth by varying the ion energy (Ei) of the ions incident at the film surface, keeping the ion-to-metal flux ratio (Ji/JMe) constant at 8. By sequentially switching Ei between 10 and 40 eV, Hf0.77Al0.10Si0.13N/Hf0.78Al0.14Si0.08N multilayers with bilayer periods Λ = 2-20 nm are grown, in which the Si2p bonding state changes from predominantly Si-Si bonds for films grown at Ei = 10 eV, to mainly Si-N bonds at Ei = 40 eV. Multilayer hardness values increase monotonically from 20 GPa with Λ = 20 nm to 27 GPa with Λ = 2 nm, while multilayer fracture toughness increases with increasing Λ. Multilayers with Λ = 10 nm have the optimized property combination of being bothrelatively hard, H∼24 GPa, and fracture tough.
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