Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC

In this study, to reveal the origin of the Z(1/2) center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z(1/2) center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z(1/2) concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (V-C) measured by EPR under light illumination can well be explained with the Z(1/2) concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z(1/2) center originates from a single V-C.

Trinh, Xuan ThangLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)xuatr28 (author)
Son, Nguyen TienLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)nguso90 (author)
Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)erija14 (author)
Suda, JunKyoto University, Japan (author)
Kimoto, TsunenobuKyoto University, Japan (author)
Kyoto University, JapanHalvledarmaterial (creator_code:org_t)

In:Journal of Applied Physics: American Institute of Physics (AIP)115:14, s. 143705-0021-89791089-7550

By the author/editor: Kawahara, Koutar ...; Trinh, Xuan Than ...; Son, Nguyen Tien; Janzén, Erik; Suda, Jun; Kimoto, Tsunenob ...

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.