Fast growth rate epitaxy on 4((degrees)under-bar) off-cut 4-inch diameter 4H-SiC wafers

• We report the development of over 100 mu m/h growth rate process on 4-inch diameter wafers using chlorinated growth. The optimized growth process has shown extremely smooth epilayers completely free of surface step-bunching with very low surface defect density, high uniformity in thickness and doping and high run to run reproducibility in growth rate, controlled doping and defect density.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Annan materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Other Materials Engineering (hsv//eng)

Keyword

Fast epitaxial growth; high growth rate; chlorinated growth; atomic force microscopy

TECHNOLOGY

TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)

kon (subject category)