Improved Epilayer Surface Morphology on 2 degrees off-cut 4H-SiC Substrates

• Homoepitaxial layers of 4H-SiC were grown with horizontal hot-wall CVD on 2 degrees off-cut substrates, with the purpose of improving the surface morphology of the epilayers and reducing the density of surface morphological defects. In-situ etching conditions in either pure hydrogen or in a mixture of silane and hydrogen prior to the growth were compared as well as C/Si ratios in the range 0.8 to 1.0 during growth. The smoothest epilayer surface, together with lowest defect density, was achieved with growth at a C/Si ratio of 0.9 after an in-situ etching in pure hydrogen atmosphere.

Nyckelord

epitaxial growth; horizontal hot-wall CVD; atomic force microscopy; vicinal off angle

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