Oxidation induced ON1, ON2a/b defects in 4H-SiC characterized by DLTS

• The deep levels ON1 and ON2a/b introduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON2a/b defect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4) and apparent energy level, apparent electron capture cross section and filling pulse measurement derived capture cross sections are given.

Nyckelord

4H-SiC; DLTS; oxidation; carrier lifetime; defect; deep level; trap; capture cross section

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