Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride

• The nitrogen 1s near edge X-ray absorption fine structure (NEXAFS) of gallium nitride (GaN) shows astrong natural linear dichroism that arises from its anisotropic wurtzite structure. An additional spectro-scopic variation arises from lattice strain in epitaxially grown GaN thin films. This variation is directlyproportional to the degree of strain for some spectroscopic features. This strain variation is interpretedwith the aid of density functional theory calculations.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

GaN

Semiconductor strain

NEXAFS

XANES

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