Silicon carbide detector for laser-generated plasma radiation

Bertuccio, GiuseppePolitecnico di Milano, Como Campus, Italy,Department of Electronic Engineering and Information Science (författare)

This research has been supported by the Italian National Institute of Nuclear Physics (INFN) under LIANA experiment and by Laser-LabEurope (Project No.: pals 001653).
We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emittedby laser generated plasmas. The detector has been employed in time of flight (TOF) configuration withinan experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5 mm2 area 100 nmthick circular Ni SiC Schottky junction on a high purity 4H-SiC epitaxial layer 115 μm thick. Currentsignals from the detector with amplitudes up to 1.6 A have been measured, achieving voltage signals over 80 V on a 50 Ω load resistance with excellent signal to noise ratios. Resolution of few nanoseconds hasbeen experimentally demonstrated in TOF measurements. The detector has operated at 250 V DC biasunder extreme operating conditions with no observable performance degradation.

Puglisi, DonatellaPolitecnico di Milano, Como Campus, Italy,Department of Electronic Engineering and Information Science(Swepub:liu)donpu97 (författare)
Torrisi, LorenzoUniversity of Messina, Italy,Department of Physics (författare)
Lanzieri, ClaudioSelex Sistemi Integrati S.p.A., Rome, Italy (författare)
Politecnico di Milano, Como Campus, ItalyDepartment of Electronic Engineering and Information Science (creator_code:org_t)

Av författaren/redakt...: Bertuccio, Giuse ...; Puglisi, Donatel ...; Torrisi, Lorenzo; Lanzieri, Claudi ...

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