Silicon carbide detector for laser-generated plasma radiation

• We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emittedby laser generated plasmas. The detector has been employed in time of flight (TOF) configuration withinan experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5 mm2 area 100 nmthick circular Ni SiC Schottky junction on a high purity 4H-SiC epitaxial layer 115 μm thick. Currentsignals from the detector with amplitudes up to 1.6 A have been measured, achieving voltage signals over 80 V on a 50 Ω load resistance with excellent signal to noise ratios. Resolution of few nanoseconds hasbeen experimentally demonstrated in TOF measurements. The detector has operated at 250 V DC biasunder extreme operating conditions with no observable performance degradation.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Keyword

Semiconductor radiation detectors

Silicon carbide

Laser

Plasma

Radiation spectroscopy

Publication and Content Type

ref (subject category)

art (subject category)